J. Semicond. > Volume 40?>?Issue 10?> Article Number: 102801

合乐彩票

Li Zhang , Haitao Qi , , Hongjuan Cheng , Lei Jin and Yuezeng Shi

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Abstract: Large size AlN bulk crystal has been grown on SiC heterogeneous seed by physical vapor transport (PVT). The properties of AlN wafer were characterized by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, etched method and atomic force microscope (AFM). Growth mechanism of AlN crystal grown on heterogeneous SiC seeds was proposed. Crystallization quality of AlN samples were improved with the growth process, which is associated with the growth mechanism. AlN single wafer has excellent crystallization quality, which is indicated by HRXRD showing the (0002), ($10\bar 1 2$) XRD FWHM of 76.3, 52.5 arcsec, respectively. The surface of the AlN wafer is measured by AFM with a roughness of 0.15 nm, which is a promising seed for AlN homogeneous growth.

Key words: heterogeneous growthAlN seedscrystallization qualitycharacterization

Abstract: Large size AlN bulk crystal has been grown on SiC heterogeneous seed by physical vapor transport (PVT). The properties of AlN wafer were characterized by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, etched method and atomic force microscope (AFM). Growth mechanism of AlN crystal grown on heterogeneous SiC seeds was proposed. Crystallization quality of AlN samples were improved with the growth process, which is associated with the growth mechanism. AlN single wafer has excellent crystallization quality, which is indicated by HRXRD showing the (0002), ($10\bar 1 2$) XRD FWHM of 76.3, 52.5 arcsec, respectively. The surface of the AlN wafer is measured by AFM with a roughness of 0.15 nm, which is a promising seed for AlN homogeneous growth.

Key words: heterogeneous growthAlN seedscrystallization qualitycharacterization



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Sumathi R R, Gille P. Role of SiC substrate polarity on the growth and properties of bulk AlN single crystals. J Mater Sci: Mater Electron, 2014, 25, 3733

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Bickermann M, Epelbaum B M, Filip O, et al. Deep-UV transparent bulk single-crystalline AlN substrates. Phys Status Solidi, 2010, C7(7–8), 1743

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Sumathi R R, Gille P. Development and progress in bulk c-plane AlN single-crystalline template growth for large-area native seeds. Jpn J Appl Phys, 2013, 52(8S), 08JA02

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Sumathi R R. Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds. Cryst Eng Commun, 2013, 15, 2232

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Schowalter L J, Slack G A, Whitlock J B, et al. Fabrication of native, single-crystal AlN substrates. Phys Status Solidi, 2003, C7, 1997

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Schujman S B, Schowalter L J, Bondokov R T, et al. Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication. J Cryst Growth, 2008, 310, 887

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Dalmau R, Craft H S, Britt J, et al. High quality AlN single crystal substrates for AlGaN-based devices. Mater Sci Forum, 2018, 924, 923

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Sumathi R R, Barz R U, Straubinger T, et al. Structural and surface topography analysis of AlN single crystals grown on 6H–SiC substrates. J Cryst Growth, 2012, 360(12), 193

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Hartmannn C, Albrecht M, Wollweber J, et al. SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen. J Cryst Growth, 2012, 344, 19

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Nagai I, Kato T, Miura T, et al. AlN bulk single crystal growth on 6H-SiC substrates by sublimation method. J Cryst Growth, 2010, 312, 2699

[1]

Wang W J, Zuo S B, Bao H Q, et al. Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method. Cryst Res Technol, 2011, 46(5), 455

[2]

http://www.cisuvc.com

[3]

http://www.hexatechinc.com

[4]

Epelbaum B M, Bickermann M, Winnacker A. Approaches to seeded PVT growth of AlN crystals. J Cryst Growth, 2005, 275, 479

[5]

Hartmann C, Dittmar A, Wollweber J, et al. Bulk AlN growth by physical vapour transport. Semicond Sci Technol, 2014, 29, 084002

[6]

Hartmann C, Wollweber J, Dittmar A, et al. Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals. Jpn J Appl Phys, 2013, 52, 08JA06

[7]

Helava H I, Mokhov E N, Avdeev O A, et al. Growth of low-defect SiC and AlN crystals in refractory metal crucibles. Mater Sci Forum, 2013, 740–742, 85

[8]

Sumathi R R, Paun M. Growth of (0001) AlN single crystals using carbon-face SiC as seeds. Mater Sci Forum, 2013, 740–742, 99

[9]

Sumathi R R, Gille P. Role of SiC substrate polarity on the growth and properties of bulk AlN single crystals. J Mater Sci: Mater Electron, 2014, 25, 3733

[10]

Bickermann M, Epelbaum B M, Filip O, et al. Deep-UV transparent bulk single-crystalline AlN substrates. Phys Status Solidi, 2010, C7(7–8), 1743

[11]

Sumathi R R, Gille P. Development and progress in bulk c-plane AlN single-crystalline template growth for large-area native seeds. Jpn J Appl Phys, 2013, 52(8S), 08JA02

[12]

Sumathi R R. Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds. Cryst Eng Commun, 2013, 15, 2232

[13]

Schowalter L J, Slack G A, Whitlock J B, et al. Fabrication of native, single-crystal AlN substrates. Phys Status Solidi, 2003, C7, 1997

[14]

Schujman S B, Schowalter L J, Bondokov R T, et al. Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication. J Cryst Growth, 2008, 310, 887

[15]

Dalmau R, Craft H S, Britt J, et al. High quality AlN single crystal substrates for AlGaN-based devices. Mater Sci Forum, 2018, 924, 923

[16]

Sumathi R R, Barz R U, Straubinger T, et al. Structural and surface topography analysis of AlN single crystals grown on 6H–SiC substrates. J Cryst Growth, 2012, 360(12), 193

[17]

Hartmannn C, Albrecht M, Wollweber J, et al. SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen. J Cryst Growth, 2012, 344, 19

[18]

Nagai I, Kato T, Miura T, et al. AlN bulk single crystal growth on 6H-SiC substrates by sublimation method. J Cryst Growth, 2010, 312, 2699

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L Zhang, H T Qi, H J Cheng, L Jin, Y Z Shi, 合乐彩票[J]. J. Semicond., 2019, 40(10): 102801. doi: 10.1088/1674-4926/40/10/102801.

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History

Manuscript received: 08 May 2019 Manuscript revised: 26 August 2019 Online: Accepted Manuscript: 18 September 2019 Uncorrected proof: 18 September 2019 Published: 01 October 2019

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