J. Semicond. > Volume 40?>?Issue 9?> Article Number: 092001

合乐彩票

Wenkai Zhu 1, 2, , Xia Wei 1, 2, , Faguang Yan 1, 2, , Quanshan Lv 1, 2, , Ce Hu 1, 2, and Kaiyou Wang 1, 2, 3, 4, ,

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Abstract: Two-dimensional (2D) atomic crystals, such as graphene, black phosphorus (BP) and transition metal dichalcogenides (TMDCs) are attractive for use in optoelectronic devices, due to their unique crystal structures and optical absorption properties. In this study, we fabricated BP/ReS2 van der Waals (vdWs) heterojunction devices. The devices realized broadband photoresponse from visible to near infrared (NIR) (400–1800 nm) with stable and repeatable photoswitch characteristics, and the photoresponsivity reached 1.8 mA/W at 1550 nm. In addition, the polarization sensitive detection in the visible to NIR spectrum (532–1750 nm) was demonstrated, and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm. Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection, which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.

Key words: broadbandpolarized photodetectionp-BP/n-ReS2vdWs herterojunction broadbandpolarized photodetectionvdWs heterojunction

Abstract: Two-dimensional (2D) atomic crystals, such as graphene, black phosphorus (BP) and transition metal dichalcogenides (TMDCs) are attractive for use in optoelectronic devices, due to their unique crystal structures and optical absorption properties. In this study, we fabricated BP/ReS2 van der Waals (vdWs) heterojunction devices. The devices realized broadband photoresponse from visible to near infrared (NIR) (400–1800 nm) with stable and repeatable photoswitch characteristics, and the photoresponsivity reached 1.8 mA/W at 1550 nm. In addition, the polarization sensitive detection in the visible to NIR spectrum (532–1750 nm) was demonstrated, and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm. Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection, which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.

Key words: broadbandpolarized photodetectionp-BP/n-ReS2vdWs herterojunction broadbandpolarized photodetectionvdWs heterojunction



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Liu E, Long M, Zeng J, et al. High responsivity phototransistors based on few-layer ReS2 for weak signal detection. Adv Funct Mater, 2016, 26(12), 1938

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Cao S, Xing Y, Han J, et al. Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p–n diode. Nanoscale, 2018, 10(35), 16805

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Li X K, Gao X G, Su B W, et al. Polarization-dependent photocurrent of black phosphorus/rhenium disulfide heterojunctions. Adv Mater Interfaces, 2018, 5(22), 1800960

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Jo S H, Lee H W, Shim J, et al. Highly efficient infrared photodetection in a gate-controllable Van der Waals heterojunction with staggered bandgap alignment. Adv Sci, 2018, 5(4), 1700423

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Massicotte M, Schmidt P, Vialla F, et al. Picosecond photoresponse in van der Waals heterostructures. Nat Nanotechnol, 2015, 11, 42

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Xue Y, Zhang Y, Liu Y, et al. Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. ACS Nano, 2016, 10(1), 573

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Lv Q, Yan F, Wei X, et al. High-performance, self-driven photodetector based on graphene sandwiched GaSe/WS2 heterojunction. Adv Opt Mater, 2018, 6(2), 1700490

[40]

Yan F, Zhao L, Patane A, et al. Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 2017, 28(27), 27L

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Wei X, Yan F, Lv Q, et al. Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions. Nanoscale, 2017, 9(24), 8388

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Wei X, Yan F, Lv Q, et al. Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts. Adv Opt Mater, 2019, 0(0), 1900190

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Wu W, Zhang Q, Zhou X, et al. Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures. Nano Energy, 2018, 51, 45

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Liu H, Xu B, Liu J M, et al. Highly efficient and ultrastable visible-light photocatalytic water splitting over ReS2. Phys Chem Chem Phys, 2016, 18(21), 14222

[45]

Huang S, Ling X. Black phosphorus: optical characterization, properties and applications. Small, 2017, 13(38), 1700823

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Ling X, Huang S, Hasdeo E H, et al. Anisotropic electron-photon and electron-phonon interactions in black phosphorus. Nano Lett, 2016, 16(4), 2260

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Wang X, Li Y, Huang L, et al. Short-wave near-infrared linear dichroism of two-dimensional germanium selenide. J Am Chem Soc, 2017, 139(42), 14976

[1]

Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306(5696), 666

[2]

Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9, 372

[3]

Vogt P, De Padova P, Quaresima C, et al. Silicene: compelling experimental evidence for graphenelike two-dimensional silicon. Phys Rev Lett, 2012, 108(15), 155501

[4]

Gomes L C, Carvalho A. Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure. Phys Rev B, 2015, 92(8), 085406

[5]

Splendiani A, Sun L, Zhang Y, et al. Emerging photoluminescence in monolayer MoS2. Nano Lett, 2010, 10(4), 1271

[6]

Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7, 699

[7]

Cao Y, Cai K, Hu P, et al. Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors. Sci Rep, 2015, 5, 8130

[8]

Luo W, Cao Y, Hu P, et al. Gate tuning of high-performance InSe-based photodetectors using graphene electrodes. Adv Opt Mater, 2015, 3(10), 1418

[9]

Schaibley J R, Yu H, Clark G, et al. Valleytronics in 2D materials. Nat Rev Mater, 2016, 1, 16055

[10]

Akinwande D, Petrone N, Hone J. Two-dimensional flexible nanoelectronics. Nat Commun, 2014, 5, 5678

[11]

Feng Q, Yan F, Luo W, et al. Charge trap memory based on few-layer black phosphorus. Nanoscale, 2016, 8(5), 2686

[12]

Rao C N R, Gopalakrishnan K, Maitra U. Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas. ACS Appl Mater Interfaces, 2015, 7(15), 7809

[13]

Pizzocchero F, Gammelgaard L, Jessen B S, et al. The hot pick-up technique for batch assembly of van der Waals heterostructures. Nat Commun, 2016, 7, 11894

[14]

Konstantatos G, Sargent E H. Nanostructured materials for photon detection. Nat Nanotechnol, 2010, 5, 391

[15]

Gong C, Zhang Y, Chen W, et al. Electronic and optoelectronic applications based on 2D novel anisotropic transition metal dichalcogenides. Adv Sci, 2017, 4(12), 1700231

[16]

Tyo J S, Goldstein D L, Chenault D B, et al. Review of passive imaging polarimetry for remote sensing applications. Appl Opt, 2006, 45(22), 5453

[17]

Yan F, Wei Z, Wei X, et al. Toward high-performance photodetectors based on 2D materials: strategy on methods. Small Methods, 2018, 2(5), 1700349

[18]

Wei X, Yan F G, Shen C, et al. Photodetectors based on junctions of two-dimensional transition metal dichalcogenides. Chin Phys B, 2017, 26(3), 038504

[19]

Ye L, Wang P, Luo W, et al. Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe2 photogate vertical heterostructure. Nano Energy, 2017, 37, 53

[20]

Tran V, Soklaski R, Liang Y, et al. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys Rev B, 2014, 89(23), 235319

[21]

Zhou Z, Cui Y, Tan P H, et al. Optical and electrical properties of two-dimensional anisotropic materials. J Semicond, 2019, 40(6), 061001

[22]

Qiao J, Kong X, Hu Z X, et al. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat Commun, 2014, 5, 4475

[23]

Yuan H, Liu X, Afshinmanesh F, et al. Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction. Nat Nanotechnol, 2015, 10, 707

[24]

Zhang E, Jin Y, Yuan X, et al. ReS2-based field-effect transistors and photodetectors. Adv Funct Mater, 2015, 25(26), 4076

[25]

Rahman M, Davey K, Qiao S Z. Advent of 2D rhenium disulfide (ReS2): fundamentals to applications. Adv Funct Mater, 2017, 27(10), 1606129

[26]

Tongay S, Sahin H, Ko C, et al. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat Commun, 2014, 5, 3252

[27]

Pradhan N R, McCreary A, Rhodes D, et al. Metal to insulator quantum-phase transition in few-layered ReS2. Nano Lett, 2015, 15(12), 8377

[28]

Lin Y C, Komsa H P, Yeh C H, et al. Single-layer ReS2: two-dimensional semiconductor with tunable in-plane anisotropy. ACS Nano, 2015, 9(11), 11249

[29]

Liu F, Zheng S, He X, et al. Highly sensitive detection of polarized light using anisotropic 2D ReS2. Adv Funct Mater, 2016, 26(8), 1169

[30]

Liu E, Long M, Zeng J, et al. High responsivity phototransistors based on few-layer ReS2 for weak signal detection. Adv Funct Mater, 2016, 26(12), 1938

[31]

Cao S, Xing Y, Han J, et al. Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p–n diode. Nanoscale, 2018, 10(35), 16805

[32]

Li X K, Gao X G, Su B W, et al. Polarization-dependent photocurrent of black phosphorus/rhenium disulfide heterojunctions. Adv Mater Interfaces, 2018, 5(22), 1800960

[33]

Castellanos-Gomez A, Buscema M, Molenaar R, et al. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater, 2014, 1(1), 011002

[34]

Perello D J, Chae S H, Song S, et al. High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering. Nat Commun, 2015, 6, 7809

[35]

Shim J, Oh S, Kang D H, et al. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic. Nat Commun, 2016, 7, 13413

[36]

Jo S H, Lee H W, Shim J, et al. Highly efficient infrared photodetection in a gate-controllable Van der Waals heterojunction with staggered bandgap alignment. Adv Sci, 2018, 5(4), 1700423

[37]

Massicotte M, Schmidt P, Vialla F, et al. Picosecond photoresponse in van der Waals heterostructures. Nat Nanotechnol, 2015, 11, 42

[38]

Xue Y, Zhang Y, Liu Y, et al. Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. ACS Nano, 2016, 10(1), 573

[39]

Lv Q, Yan F, Wei X, et al. High-performance, self-driven photodetector based on graphene sandwiched GaSe/WS2 heterojunction. Adv Opt Mater, 2018, 6(2), 1700490

[40]

Yan F, Zhao L, Patane A, et al. Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 2017, 28(27), 27L

[41]

Wei X, Yan F, Lv Q, et al. Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions. Nanoscale, 2017, 9(24), 8388

[42]

Wei X, Yan F, Lv Q, et al. Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts. Adv Opt Mater, 2019, 0(0), 1900190

[43]

Wu W, Zhang Q, Zhou X, et al. Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures. Nano Energy, 2018, 51, 45

[44]

Liu H, Xu B, Liu J M, et al. Highly efficient and ultrastable visible-light photocatalytic water splitting over ReS2. Phys Chem Chem Phys, 2016, 18(21), 14222

[45]

Huang S, Ling X. Black phosphorus: optical characterization, properties and applications. Small, 2017, 13(38), 1700823

[46]

Ling X, Huang S, Hasdeo E H, et al. Anisotropic electron-photon and electron-phonon interactions in black phosphorus. Nano Lett, 2016, 16(4), 2260

[47]

Wang X, Li Y, Huang L, et al. Short-wave near-infrared linear dichroism of two-dimensional germanium selenide. J Am Chem Soc, 2017, 139(42), 14976

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W K Zhu, X Wei, F G Yan, Q Lv, C Hu, K Y Wang, Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction[J]. J. Semicond., 2019, 40(9): 092001. doi: 10.1088/1674-4926/40/9/092001.

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Manuscript received: 29 June 2019 Manuscript revised: 05 July 2019 Online: Accepted Manuscript: 15 July 2019 Uncorrected proof: 22 August 2019 Published: 01 September 2019

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