J. Semicond. > Volume 40?>?Issue 6?> Article Number: 061001

合乐彩票

Ziqi Zhou 1, 2, , Yu Cui 1, 2, , Ping-Heng Tan 1, 2, , Xuelu Liu 1, 2, , and Zhongming Wei 1, 2, ,

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Abstract: Two-dimensional (2D) anisotropic materials, such as B-P, B-As, GeSe, GeAs, ReSe2, KP15 and their hybrid systems, exhibit unique crystal structures and extraordinary anisotropy. This review presents a comprehensive comparison of various 2D anisotropic crystals as well as relevant FETs and photodetectors, especially on their particular anisotropy in optical and electrical properties. First, the structure of typical 2D anisotropic crystal as well as the analysis of structural anisotropy is provided. Then, recent researches on anisotropic Raman spectra are reviewed. Particularly, a brief measurement principle of Raman spectra under three typical polarized measurement configurations is introduced. Finally, recent progress on the electrical and photoelectrical properties of FETs and polarization-sensitive photodetectors based on 2D anisotropic materials is summarized for the comparison between different 2D anisotropic materials. Beyond the high response speed, sensitivity and on/off ratio, these 2D anisotropic crystals exhibit highly conduction ratio and dichroic ratio which can be applied in terms of polarization sensors, polarization spectroscopy imaging, optical radar and remote sensing.

Key words: two-dimensionalanisotropicRaman spectrapolarization-sensitivephotodetectors

Abstract: Two-dimensional (2D) anisotropic materials, such as B-P, B-As, GeSe, GeAs, ReSe2, KP15 and their hybrid systems, exhibit unique crystal structures and extraordinary anisotropy. This review presents a comprehensive comparison of various 2D anisotropic crystals as well as relevant FETs and photodetectors, especially on their particular anisotropy in optical and electrical properties. First, the structure of typical 2D anisotropic crystal as well as the analysis of structural anisotropy is provided. Then, recent researches on anisotropic Raman spectra are reviewed. Particularly, a brief measurement principle of Raman spectra under three typical polarized measurement configurations is introduced. Finally, recent progress on the electrical and photoelectrical properties of FETs and polarization-sensitive photodetectors based on 2D anisotropic materials is summarized for the comparison between different 2D anisotropic materials. Beyond the high response speed, sensitivity and on/off ratio, these 2D anisotropic crystals exhibit highly conduction ratio and dichroic ratio which can be applied in terms of polarization sensors, polarization spectroscopy imaging, optical radar and remote sensing.

Key words: two-dimensionalanisotropicRaman spectrapolarization-sensitivephotodetectors



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[1]

Shang J, Huang L, Wei Z. Effects of vertical electric field and compressive strain on electronic properties of bilayer ZrS2. J Semicond, 2017, 38(3), 033001

[2]

Fan C, Li Y, Lu F, et al. Wavelength dependent UV–vis photodetectors from SnS2 flakes. RSC Adv, 2016, 6(1), 422

[3]

Wei Z, Li B, Xia C, et al. Various structures of 2D transition-metal dichalcogenides and their applications. Small Methods, 2018, 2(11), 1800094

[4]

Wang X, Cui Y, Li T, et al. Recent advances in the functional 2D photonic and optoelectronic devices. Adv Opt Mater, 2018, 1801274

[5]

Wang Y, Huang L H, Li B, et al. Composition-tunable 2D SnSe2(1? x)S2 x alloys towards efficient bandgap engineering and high performance (opto)electronics. J Mater Chem C, 2017, 5(1), 84

[6]

Mueller T, Xia F, Avouris P. Graphene photodetectors for high-speed optical communications. Nat Photon, 2010, 4, 297

[7]

Novoselov K S, Geim A K, Morozov S V, et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature, 2005, 438, 197

[8]

Huang L, Tao L, Gong K, et al. Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides. Phys Rev B, 2017, 96, 205303

[9]

Podzorov V, Gershenson M, Zeis C, et al. High-mobility field-effect transistors based on transition metal dichalcogenides. Appl Phys Lett, 2004, 84, 3301-3303

[10]

Xia C, Li J. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides. J Semicond, 2016, 37(5), 051001

[11]

Huo N, Yang Y, Li J. Optoelectronics based on 2D TMDs and heterostructures. J Semicond, 2017, 38(3), 031002

[12]

Tan Q H, Zhang X, Luo X D, et al. Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings. J Semicond, 2017, 38(3), 031006

[13]

Lou Z, Liang Z, Shen G. Photodetectors based on two dimensional materials. J Semicond, 2016, 37(9), 091001

[14]

Amani M, Regan E, Bullock J, et al. Mid-wave infrared photoconductors based on black phosphorus-arsenic alloys. ACS Nano, 2017, 11(11), 11724

[15]

Amani M, Tan C, Zhang G, et al. Solution-synthesized high-mobility tellurium nanoflakes for short-wave infrared photodetectors. ACS Nano, 2018, 12(7), 7253

[16]

Chu F, Chen M, Wang Y, et al. A highly polarization sensitive antimonene photodetector with a broadband photoresponse and strong anisotropy. J Mater Chem C, 2018, 6(10), 2509

[17]

Hong T, Chamlagain B, Lin W, et al. Polarized photocurrent response in black phosphorus field-effect transistors. Nanoscale, 2014, 6, 8978

[18]

Huo N, Yang S, Wei Z, et al. Photoresponsive and gas sensing field-effect transistors based on multilayer WS(2) nanoflakes. Sci Rep, 2014, 4, 5209

[19]

Lai J, Liu X, Ma J, et al. Anisotropic broadband photoresponse of layered type-II Weyl semimetal MoTe2. Adv Mater, 2018, 30(22), e1707152

[20]

Li Y, Wang Y, Huang L, et al. Anti-ambipolar field-effect transistors based on few-layer 2D transition metal dichalcogenides. ACS Appl Mater Interfaces, 2016, 8(24), 15574

[21]

Wang Y, Huang L, Wei Z. Photoresponsive field-effect transistors based on multilayer SnS2 nanosheets. J Semicond, 2017, 38(3), 034001

[22]

Cao T, Li Z, Qiu D Y, et al. Gate switchable transport and optical anisotropy in 90 degrees twisted bilayer black phosphorus. Nano Lett, 2016, 16(9), 5542

[23]

Liu B, Kopf M, Abbas A N, et al. Black arsenic-phosphorus: layered anisotropic infrared semiconductors with highly tunable compositions and properties. Adv Mater, 2015, 27, 4423

[24]

Zhong M, Wang X, Liu S, et al. High-performance photodetectors based on Sb2S3 nanowires: wavelength dependence and wide temperature range utilization. Nanoscale, 2017, 9, 12364

[25]

Ye L, Wang P, Luo W, et al. Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe2 photogate vertical heterostructure. Nano Energy, 2017, 37, 53

[26]

Zhong M, Zhou K, Wei Z, et al. Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α-MoO3 atomic crystals. 2D Mater, 2018, 5, 035033

[27]

Li J B, Wang X R. Preface to the special topic on 2D materials and devices. J Semicond, 2017, 38(3), 031001

[28]

Hu Z, Li Q, Lei B, et al. Abnormal near-infrared absorption in 2D black phosphorus induced by Ag nanoclusters surface functionalization. Adv Mater, 2018, 1801931

[29]

Lin T, Cong X, Lin M L, et al. The phonon confinement effect in two-dimensional nanocrystals of black phosphorus with anisotropic phonon dispersions. Nanoscale, 2018, 10(18), 8704

[30]

Barreteau C, Michon B, Besnard C, et al. High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors. J Cryst Growth, 2016, 443, 75

[31]

Li L, Wang W, Gong P, et al. 2D GeP: An unexploited low-symmetry semiconductor with strong In-plane anisotropy. Adv Mater, 2018, 30(14), e1706771

[32]

Mortazavi B, Rabczuk T. Anisotropic mechanical properties and strain tuneable band-gap in single-layer SiP, SiAs, GeP and GeAs. Physica E, 2018, 103, 273

[33]

Li C, Wang S, Li C, et al. Highly sensitive detection of polarized light using a new group IV–V 2D orthorhombic SiP. J Mater Chem C, 2018, 6(27), 7219

[34]

Wang X, Jones A, Seyler K, et al. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat Nanotechnol, 2015, 10, 517

[35]

Chen Y, Chen C, Kealhofer R, et al. Black arsenic: a layered semiconductor with extreme in-plane anisotropy. Adv Mater, 2018, 30, 1800754

[36]

Zhong M, Xia Q, Pan L, et al. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Adv Funct.Mater, 2018, 28, 1802581

[37]

Silva-Guillén J A, Canadell E, Ordejón P, et al. Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS3: electron doping and plasmons. 2D Mater, 2017, 4(2), 025085

[38]

Yuan H, Liu X, Afshinmanesh F, et al. Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction. Nat Nanotechnol, 2015, 10, 707

[39]

Long M, Gao A, Wang P, et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci Adv, 2017, 3, e1700589

[40]

Zhou Z, Long M, Pan L, et al. Perpendicular optical reversal of the linear dichroism and polarized photodetection in 2D GeAs. ACS Nano, 2018

[41]

Wang X, Li Y, Huang L, et al. Short-wave near-infrared linear dichroism of two-dimensional germanium selenide. J Am Chem Soc, 2017, 139, 14976

[42]

Lin Y C, Komsa H P, Yeh C H, et al. Single-layer ReS(2): two-dimensional semiconductor with tunable in-plane anisotropy. ACS Nano, 2015, 9(11), 11249

[43]

Zhang E, Jin Y, Yuan X, et al. ReS2-based field-effect transistors and photodetectors. Adv Funt Mater, 2015, 25, 4076

[44]

Zhang E, Wang P, Li Z, et al. Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets. ACS Nano, 2016, 10, 8067

[45]

Tian N, Yang Y, Liu D, et al. High anisotropy in tubular layered exfoliated KP15. ACS Nano, 2018, 12(2), 1712

[46]

Li L, Yu Y, Ye GJ, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9(5), 372

[47]

Guo J, Liu Y, Ma Y, et al. Few-layer GeAs field-effect transistors and infrared photodetectors. Adv Mater, 2018, 30, 1705934

[48]

Niu Y, Frisenda R, Flores E, et al. Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p–n junction. Adv Optical Mater, 2018, 6(19), 1800351

[49]

Wen W, Zhu Y, Liu X, et al. Anisotropic spectroscopy and electrical properties of 2D ReS2(1– x)Se2 x. alloys with distorted 1T structure. Small, 2017, 13(12), 1603788

[50]

Rau J W, Kannewurf C R. Optical absorption, reflectivity, and electrical conductivity in GeAs and GeAs2. Phys Rev B, 1971, 3, 2581

[51]

Wang P, Liu S, Luo W, et al. Arrayed Van Der Waals broadband detectors for dual-band detection. Adv Mater, 2017, 29(16)

[52]

Liu S, Xiao W, Zhong M, et al. Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS3). Nanotechnology, 2018, 29(18), 184002

[53]

Rahman M, Davey K, Qiao S Z. Advent of 2D rhenium disulfide (ReS2): fundamentals to applications. Adv Funct Mater, 2017, 27(10), 1606129

[54]

Kang B, Kim Y, Cho JH, et al. Ambipolar transport based on CVD-synthesized ReSe2. 2D Mater, 2017, 4(2), 025014

[55]

Zhang X, Tan Q H, Wu J B, et al. Review on the Raman spectroscopy of different types of layered materials. Nanoscale, 2016, 8(12), 6435

[56]

Yang G, Zhang W. Renaissance of pyridine-oxazolines as chiral ligands for asymmetric catalysis. Chem Soc Rev, 2018, 47(5), 1783

[57]

Wu J B, Zhao H, Li Y, et al. Monolayer molybdenum disulfide nanoribbons with high optical anisotropy. Adv Opt Mater, 2016, 4(5), 756

[58]

Wu J B, Lin M L, Cong X, et al. Raman spectroscopy of graphene-based materials and its applications in related devices. Chem Soc Rev, 2018, 47(5), 1822

[59]

Liang L, Zhang J, Sumpter B G, et al. Low-frequency shear and layer-breathing modes in Raman scattering of two-dimensional materials. ACS Nano, 2017, 11(12), 11777

[60]

Zhao H, Wu J, Zhong H, et al. Interlayer interactions in anisotropic atomically thin rhenium diselenide. Nano Res, 2015, 8(11), 3651

[61]

Ribeiro H B, Pimenta M A, de Matos C J S. Raman spectroscopy in black phosphorus. J Raman Spectrosc, 2018, 49(1), 76

[62]

Liu X L, Zhang X, Lin M L, et al. Different angle-resolved polarization configurations of Raman spectroscopy: A case on the basal and edge plane of two-dimensional materials. Chin Phys B, 2017, 26(6), 067802

[63]

Lee K, Kamali S, Ericsson T, et al. GeAs: Highly anisotropic van der Waals thermoelectric material. Chem Mater, 2016, 28(8), 2776

[64]

Zhou L, Guo Y, Zhao J. GeAs and SiAs monolayers: novel 2D semiconductors with suitable band structures. Phys E, 2018, 95, 149

[65]

Song Q, Wang H, Pan X, et al. Anomalous in-plane anisotropic Raman response of monoclinic semimetal 1 T -MoTe2. Sci Rep, 2017, 7(1), 1758

[66]

Song Q, Wang H, Xu X, et al. The polarization-dependent anisotropic Raman response of few-layer and bulk WTe2 under different excitation wavelengths. RSC Adv, 2016, 6(105), 103830

[67]

Xu X, Song Q, Wang H, et al. In-plane anisotropies of polarized raman response and electrical conductivity in layered tin selenide. ACS Appl Mater Interfaces, 2017, 9(14), 12601

[68]

Liu X, Ryder C R, Wells S A, et al. Resolving the in-plane anisotropic properties of black phosphorus. Small Methods, 2017, 1, 1700143

[69]

Venuthurumilli P, Ye P, Xu X. Plasmonic resonance enhanced polarization-sensitive photodetection by black phosphorus in near infrared. ACS Nano, 2018, 12, 4861

[70]

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Z Q Zhou, Y Cui, P H Tan, X L Liu, Z M Wei, 合乐彩票[J]. J. Semicond., 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001.

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Manuscript received: 26 March 2019 Manuscript revised: 30 April 2019 Online: Accepted Manuscript: 15 May 2019 Uncorrected proof: 04 June 2019 Published: 05 June 2019

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